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Product Detailed Parameters
- Description：IC POWER MODULE SMD
- Series：*
- Mfr：Microchip Technology
- Package：Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The CMTDGF50H603G is a silicon IGBT power module manufactured by Microchip Technology. It features a full bridge configuration housed in the SP1-12 surface-mount package. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 80 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V, a gate-emitter leakage current of 600 nA, and a power dissipation rating of 176 W. The module operates within a temperature range of -40°C to +100°C with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Full bridge IGBT configuration for efficient power conversion
- Surface-mount SP1-12 package design for compact integration
- Silicon technology ensuring reliable high-current switching
Applications
- Industrial motor drives
- Power supply inverters
- AC/DC converters
Procurement Notes
Verify the specific suffix against official Microchip documentation to confirm exact pinout and thermal characteristics. Ensure compatibility with the intended PCB layout for the SP1-12 package. Confirm that the operating temperature range meets system requirements. Cross-reference datasheet revisions for any updates to electrical limits or mechanical dimensions before finalizing procurement.
Selection Notes
Select this module when a surface-mount full bridge topology is required for 600V applications. Consider the 80A continuous current rating and 1.5V saturation voltage for efficiency needs. Evaluate the SP1-12 package constraints against available board space. Compare thermal dissipation capabilities with system cooling solutions to ensure operation within the specified temperature limits.
Part Context
This component belongs to Microchip's discrete semiconductor module portfolio, specifically designed for high-power switching applications. It utilizes standard silicon IGBT technology to provide robust performance in industrial environments. The module integrates multiple switches into a single surface-mount unit, simplifying assembly compared to discrete components.
Replacement Considerations
APTCV50H60T3G
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage is 600 V.
What is the package type?
The module uses the SP1-12 surface-mount package.
