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Product Detailed Parameters
- Description：MOSFET P-CH 20V 100MA SOT523
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.66 nC @ 4.5 V
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The CMUDM8001 TR PBFREE is a surface-mount P-Channel Enhancement-mode Silicon MOSFET manufactured by Central Semiconductor. It utilizes a P-Channel DMOS process designed for high-speed pulsed amplifier and driver applications. The device features low on-resistance and low threshold voltage, making it logic level compatible. It is housed in a small SOT-523 package with a maximum drain-source voltage of 20 V and a continuous drain current of 100 mA at steady state. Power dissipation is rated at 250 mW.
Feature Summary
- P-Channel Enhancement-mode Silicon MOSFET utilizing P-Channel DMOS process technology
- Designed for high-speed pulsed amplifier and driver applications
- Features low rDS(ON) and low threshold voltage characteristics
- Logic level compatible operation
Applications
- Load/Power Switches
- Power Supply Converter Circuits
- Battery Powered Portable Equipment
Procurement Notes
Verify component status before procurement as the manufacturer has issued an End of Life notice for all devices in the SOT-523 package. Orders may be accepted only for available inventory or through Last Time Buy provisions. Confirm final shipment dates and minimum order quantities with the supplier, as availability is subject to existing stock levels and production phase-out schedules.
Selection Notes
Select this component for designs requiring a compact P-Channel MOSFET with logic-level compatibility. Ensure the application operates within the 20 V drain-source voltage limit and 100 mA steady-state current rating. Consider the 250 mW power dissipation capability and operating temperature range of -65°C to +150°C during thermal design. Verify that the SOT-523 package dimensions fit the PCB layout constraints.
Part Context
This part belongs to the Central Semiconductor CMUDM series of surface-mount P-Channel MOSFETs. The marking code for this specific device is C8A. The complementary N-Channel device in this family is the CMUDM7001. The 'TR' suffix indicates tape and reel packaging, while 'PBFREE' denotes lead-free plating options.
Replacement Considerations
No suggested replacement part numbers are provided in the official End of Life notice for this component. Contact Central Semiconductor Customer Service for assistance in locating alternate sources if no direct replacement is available.
