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The CMXT3906 TR TIN/LEAD is a dual PNP bipolar junction transistor array manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in an SOT-26 (SOT-23-6) surface-mount package. The device supports a maximum collector-emitter voltage of 40V and a continuous collector current of 200mA per element. Key electrical parameters include a transition frequency of 250MHz, a power dissipation rating of 350mW, and a DC current gain minimum of 100 at 10mA and 1V. The component operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix 'TIN/LEAD' against the manufacturer's current datasheet to confirm lead content status. Standard RoHS-compliant versions typically use tin plating. Ensure the procurement specification matches the required environmental compliance for the target assembly process.
Select this component when a dual PNP configuration is required in a small outline package. Compare the 200mA current limit and 40V voltage rating against circuit requirements. Consider the SOT-26 thermal resistance if multiple elements are driven simultaneously to ensure power dissipation limits are not exceeded.
This part belongs to the CMXT3906 family of dual PNP transistors from Central Semiconductor. It shares core electrical specifications with the standard CMXT3906 but differs in packaging material or plating composition indicated by the suffix. It serves as a compact alternative to discrete single-transistor solutions.
Publicly confirmed parameter-equivalent substitutes include the CMXT3906 TR PBFREE. Verify pinout compatibility and electrical tolerances before substitution. Other generic MMBT3906-based dual arrays may require schematic review due to potential differences in saturation voltage or gain ranges.