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CNW11AV3300 is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists onsemi. Its product description is OPTOISO 4KV TRANS W/BASE 6-DIP. Review the specifications below when checking this part for your BOM.
The CNW11AV3300 is a single-channel optoisolator manufactured by onsemi, housed in a 6-DIP package. It features a DC input and a transistor output with an accessible base terminal. The device provides a high isolation voltage of 4000Vrms. Key electrical parameters include a maximum collector-emitter voltage of 70V, a peak forward current of 100mA, and a maximum saturation voltage of 400mV. The current transfer ratio ranges from 100% to 300% at a forward current of 10mA.
Verify component authenticity upon receipt, as this part number may be subject to obsolescence or replacement by newer series such as CNY17 variants. Confirm that the specific suffix matches the required pin configuration and insulation ratings. Ensure storage conditions comply with moisture sensitivity levels to prevent package damage before soldering. Cross-reference datasheets for any updates regarding RoHS compliance status.
Select this component when a transistor output with an exposed base is required for customizable drive characteristics. It is suitable for applications needing moderate current transfer ratios and high isolation voltages. Consider thermal management requirements based on the specified forward current limits. Evaluate package compatibility with existing PCB footprints before finalizing the design.
This device belongs to the CNW11 family of optocouplers produced by onsemi. These components are widely used in legacy and modern electronic designs for safe signal transmission across isolated domains. The family offers various output configurations to suit different circuit needs.
The CNY171M is listed as a similar alternative by onsemi. Verify pinout compatibility and electrical specifications before substitution.
The base terminal allows users to connect external resistors or capacitors to adjust the switching speed or provide additional biasing for the phototransistor.
The device supports an isolation voltage of 4000Vrms between the input and output sections.
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