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CNY117-3X007T is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Vishay Semiconductor Opto Division. Its product description is OPTOISO 5KV TRANS W/BASE 6-SMD. Review the specifications below when checking this part for your BOM.
The CNY117-3X007T is a single-channel transistor output optocoupler manufactured by Vishay Semiconductor Opto Division. It features an NPN phototransistor output housed in a surface-mount PDIP-6 Gull Wing package. The device provides an insulation voltage of 5000 Vrms and supports a maximum collector current of 100 mA with a collector-emitter voltage rating of 70 V. The forward current is rated at 60 mA, and the power dissipation is 150 mW. The current transfer ratio ranges from 80% to 160%. Operating temperatures span from -55°C to +110°C.
Verify the specific suffix designation against the manufacturer datasheet to confirm the exact current transfer ratio binning. Ensure the ordering code matches the required packaging format, such as cut tape or reel, as specified in the procurement documentation. Cross-reference the component marking with official Vishay identification guides to authenticate the source.
Select this component when a standard NPN phototransistor output is required for general-purpose isolation. Consider the 5000 Vrms insulation rating for safety compliance. Evaluate the 80-160% current transfer ratio range against circuit gain requirements. Confirm that the surface-mount package dimensions fit the available PCB footprint constraints.
This part belongs to the CNY117 series, which utilizes a gallium arsenide infrared LED coupled to an NPN silicon phototransistor. The series is characterized by high reliability and compliance with international safety standards. The specific model variant defines the optical coupling efficiency binning within the broader product family specifications.
Compatible substitutes include the CNY117-2X007T and CNY117-4X007T, which share identical pinouts and mechanical dimensions but offer different current transfer ratio ranges. Verify that the alternative binning meets the minimum signal transmission requirements of the target application circuit.
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