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CNY17-5X is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Isocom Components 2004 LTD. Its product description is OPTOISO 5.3KV TRANS W/BASE 6-DIP. Review the specifications below when checking this part for your BOM.
The CNY17-5X is a single-channel optocoupler manufactured by Isocom Components 2004 LTD. It integrates an infrared emitting diode with an NPN silicon phototransistor featuring a base terminal for enhanced switching control. The device utilizes a 6-pin DIP package and supports surface-mount or through-hole configurations depending on the suffix. Key electrical parameters include a maximum forward current of 60 mA, an isolation voltage of 5300 Vrms, and a collector-emitter breakdown voltage of 70 V. The typical rise time is 3 µs and fall time is 2.3 µs. The Current Transfer Ratio (CTR) ranges from a minimum of 200% to a maximum of 400% at a forward current of 10 mA.
Verify the specific package variant (DIP vs SMD) and CTR binning requirements against the datasheet before ordering. Confirm that the 5300 Vrms isolation rating meets system safety standards. Ensure the 60 mA maximum forward current limit is respected in circuit design to prevent device degradation.
Select this component when high current transfer ratio is required compared to standard CNY17-1 variants. The presence of a base terminal allows for external biasing to optimize turn-off speed. Verify compatibility with the target PCB footprint, as the X suffix typically denotes through-hole DIP while SMT&R denotes surface mount.
This part belongs to the CNY17 series of general-purpose optocouplers. Unlike the CNY17-1 which has a lower CTR range, the CNY17-5X offers significantly higher gain (200%-400%). It shares the same physical 6-pin form factor but differs internally in transistor gain characteristics to suit applications requiring stronger output drive capabilities.
CNY17-1SMT&R
The typical rise time is 3 µs and the typical fall time is 2.3 µs.
Yes, it includes a base terminal on the phototransistor side to allow for external connection, improving switching performance.
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