CNY17F3VM

CNY17F3VM

$0.16
  • Description:OPTOISO 4.17KV 1CH TRANS 6-DIP
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk

SKU:c95d50bafa1a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:OPTOISO 4.17KV 1CH TRANS 6-DIP
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Number of Channels:1
  • Voltage - Isolation:4170Vrms
  • Current Transfer Ratio (Min):100% @ 10mA
  • Current Transfer Ratio (Max):200% @ 10mA
  • Turn On / Turn Off Time (Typ):2µs, 3µs
  • Rise / Fall Time (Typ):4µs, 3.5µs (Max)
  • Input Type:DC
  • Output Type:Transistor
  • Voltage - Output (Max):70V
  • Current - Output / Channel:50mA
  • Voltage - Forward (Vf) (Typ):1.35V
  • Current - DC Forward (If) (Max):60 mA
  • Vce Saturation (Max):400mV
  • Operating Temperature:-40°C ~ 100°C
  • Mounting Type:Through Hole
  • Package / Case:6-DIP (0.300", 7.62mm)
  • Supplier Device Package:6-DIP
  • Grade:-
  • Qualification:-

Download product information

CNY17F3VM

Overview

The CNY17F3VM is a single-channel transistor output optocoupler manufactured by Fairchild Semiconductor. It integrates a Gallium Arsenide infrared emitting diode with an NPN phototransistor in a 6-DIP package. The device provides an isolation voltage of 4170Vrms and supports a collector-emitter voltage of 70V. It features a current transfer ratio ranging from 100% to 200% at a forward current of 10mA, with a maximum DC forward current of 60mA. The unit operates within a temperature range of -40°C to +100°C.

Feature Summary

  • Integrates a Gallium Arsenide IRED coupled with an NPN phototransistor for signal transmission
  • Provides high electrical isolation between input and output circuits
  • Offers selectable current transfer ratio groups for consistent performance
  • Complies with UL and VDE safety recognition standards

Applications

  • Power supply regulators
  • Microprocessor inputs
  • Industrial controls
  • Digital logic inputs

Procurement Notes

Verify the specific manufacturer source, as production rights for this component have transferred to onsemi. Confirm that the received part matches the exact suffix requirements for insulation voltage and package color. Check for RoHS compliance status relative to the manufacturing date. Ensure the component is sourced from authorized distributors to avoid counterfeit parts. Validate all electrical parameters against the official datasheet before integration.

Selection Notes

Select this component when a standard DIP-6 form factor is required for through-hole mounting. Choose based on the need for a 4170Vrms isolation rating and NPN phototransistor output. Consider the operating temperature range and current transfer ratio specifications for the specific circuit application. Verify compatibility with existing PCB footprints designed for the CNY17 series.

Part Context

This component belongs to the CNY17 series, which consists of GaAs IREDs coupled with NPN phototransistors. The 'F' designation typically indicates specific current transfer ratio groupings, while 'VM' denotes the white package variant with VDE approval. This series is widely used in general-purpose isolation applications requiring reliable signal transmission across isolated boundaries.

Replacement Considerations

Direct replacements include CNY17F3W for black package variants or CNY17F3M for other packaging options. Verify pinout compatibility and isolation voltage ratings when substituting. Cross-reference with MOC810X devices if form factor constraints allow.

CNY17F3VMCNY17F3VM
$0.16
Buy Now