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Product Detailed Parameters
- Description：JFET N-CH AMP CHIP FORM 1=400
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tray
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：6 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The CP210-2N4416-CT is an N-channel silicon amplifier JFET manufactured by Central Semiconductor Corp. This component functions as a small signal transistor designed for amplification applications. It is supplied in a chip die format, suitable for integration into custom semiconductor assemblies or hybrid circuits where bare die processing is required.
Feature Summary
- N-channel silicon construction for amplifier applications
- Small signal JET configuration
- Bare die chip format
Applications
- Small signal amplification circuits
- Custom semiconductor assembly integration
- Hybrid circuit fabrication
Procurement Notes
Verify the specific die marking and lot traceability requirements with the manufacturer prior to ordering. Confirm that the cut tape packaging designation aligns with the intended automated placement equipment specifications. Ensure compatibility with standard die attach processes for bare die components.
Selection Notes
Select this component when an N-channel silicon JET die is required for small signal amplification. The bare die format necessitates careful handling during assembly. Verify thermal management capabilities and substrate compatibility for the specific application environment before finalizing the design.
Part Context
This part belongs to the broader category of discrete semiconductor devices produced by Central Semiconductor Corp. It represents a specialized JFET solution distinct from packaged transistors, offering flexibility for high-density or custom packaging strategies within electronic systems.
