CP210-2N4416A-WN

CP210-2N4416A-WN

  • Description:JFET N-CH 35V 15MA DIE
  • Series:-

SKU:002494f83ab9 Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 35V 15MA DIE
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):35 V
  • Drain to Source Voltage (Vdss):35 V
  • Current - Drain (Idss) @ Vds (Vgs=0):5 mA @ 20 V
  • Current Drain (Id) - Max:15 mA
  • Voltage - Cutoff (VGS off) @ Id:2.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:4pF @ 15V
  • Resistance - RDS(On):-
  • Power - Max:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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CP210-2N4416A-WN

Overview

The CP210-2N4416A-WN is an N-channel JFET die manufactured by Central Semiconductor Corp. It functions as a small signal silicon amplifier chip designed for integration into custom semiconductor assemblies. The device provides amplification capabilities within the specified operational parameters defined by its datasheet specifications.

Feature Summary

  • N-channel junction field-effect transistor architecture
  • Silicon-based small signal amplification
  • Unpackaged die configuration for hybrid circuit integration

Applications

  • Custom monolithic microwave integrated circuits (MMICs)
  • Hybrid microelectronic assemblies
  • Specialized analog signal processing modules

Procurement Notes

Verify the specific suffix 'WN' against the official Central Semiconductor Corp datasheet to confirm exact binning or testing criteria. Ensure compatibility with intended substrate materials and bonding processes before procurement.

Selection Notes

Select this component when a discrete N-channel JFET die is required for custom amplifier designs. Evaluate thermal management requirements for bare die mounting and verify that the packageless form factor aligns with the target assembly technology.

Part Context

This part belongs to the CP210 series of small signal transistors. It shares functional similarities with other JFET dies but is distinct in its specific N-channel configuration and die-level packaging format intended for specialized electronic manufacturing.

Replacement Considerations

Direct replacements are limited due to the bare die nature of the component. Equivalent performance may require redesigning the amplifier stage with available packaged JFETs or sourcing alternative dies from Central Semiconductor with matching electrical characteristics.

CP210-2N4416A-WNCP210-2N4416A-WN

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