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The CP302-MPSH10-CT20 is a silicon NPN RF transistor die designed for low noise UHF/VHF amplifier and high output oscillator applications. It features a collector-base voltage of 30 V, collector-emitter voltage of 25 V, and continuous collector current of 50 mA. The device operates within a junction temperature range of -65 to +150 °C. Electrical characteristics include a transition frequency (fT) of 650 MHz at 4.0 mA collector current and 10 V collector-emitter voltage. The die dimensions are 14.5 x 14.5 mils with a thickness of 9.0 mils.
This component has been officially classified as End of Life by the manufacturer. No direct replacement part numbers are currently available in the official substitution list. Procurement is restricted to existing stock only. Customers requiring technical data or assistance locating alternate sources should contact the manufacturer's engineering department directly via email.
Selection requires verification of bare die mechanical compatibility, including pad sizes and metalization specifications. Designers must account for the discontinuation status when planning long-term production. The CT20 suffix indicates singulated die packaging; verify specific tray requirements against manufacturing needs. Ensure circuit designs accommodate the specified maximum ratings for voltage and current limits.
The CP302-MPSH10 belongs to Central Semiconductor Corp's discrete semiconductor product line. This specific item is a bare die configuration rather than a packaged component. The product family focuses on RF transistors intended for specialized amplifier and oscillator circuits. The manufacturer provides detailed mechanical and electrical datasheets for integration purposes.
No public replacement part numbers are listed by the manufacturer. The official documentation states that no substitutes are available and availability is limited to stock only. Contacting the manufacturer's engineering team is recommended for potential alternative sourcing guidance.