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The CP372-CT is a singulated N-Channel Enhancement-Mode MOSFET die designed for power management and drive circuit applications. It features a 7.5 mil thickness with a 37 x 63 mil die size, optimized for low profile wire bond attachment. The device supports a maximum drain-source voltage of 60V and a continuous drain current of 5.3A at 25°C. Key electrical characteristics include a typical on-resistance of 41mΩ at VGS=10V and a total gate charge of 8.8nC. Operating junction temperature ranges from -55°C to +150°C.
Verify the End-of-Life status before procurement. The CP372 wafer process has been discontinued. Orders are restricted to available inventory only. Confirm if the suggested replacement part number meets your design requirements. Contact Central Semiconductor Corp directly or through authorized representatives for final shipment details and availability confirmation.
Select this component when a bare die form factor is required for custom packaging. Ensure the application utilizes wire bonding techniques compatible with the specified aluminum top metalization. Verify that the 60V rating and 5.3A current capacity align with the system's peak and steady-state demands. Consider thermal management strategies given the small physical dimensions.
This component belongs to the CP series of discrete semiconductor dies manufactured by Central Semiconductor Corp. It is specifically packaged as a singulated die in a waffle pack (CT suffix). The product line focuses on medium-power devices intended for integration into larger assemblies where space and efficiency are critical constraints.
The CP372 is officially discontinued. The datasheet explicitly lists CP403-CZDM0605N-CT as the suggested replacement for the CT package variant. Evaluate the CP403 specifications against the original CP372 parameters to ensure compatibility with existing designs.