CP373-CTLDM303N-CT

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk

SKU:553e4d2f7252 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP373-CTLDM303N-CT

Overview

The CP373-CTLDM303N-CT is a bare die N-channel enhancement-mode MOSFET manufactured using the Central Semiconductor Corp CP373 wafer process. The device features a die size of 39 x 27 mils and a thickness of 7.5 mils. It utilizes aluminum top-side metalization (40,000Å) and a back-side Ti/Ni/Ag stack (1,000Å/3,000Å/10,000Å). The component is supplied as singulated die in a waffle tray pack.

Feature Summary

N-channel enhancement-mode MOSFET chip architecture
Aluminum top-side and Ti/Ni/Ag back-side metalization layers
Singulated die configuration for custom packaging integration

Applications

Custom power module assembly
High-density semiconductor packaging
Specialized discrete circuit fabrication

Procurement Notes

Verify current availability status as the CP373 wafer process is officially discontinued and classified as End of Life. Confirm if inventory remains or if transition to the replacement CP398X process is required. Contact Central Semiconductor engineering directly for technical data or alternate sourcing assistance regarding this specific part number.

Selection Notes

Select this component only when custom bare die integration is necessary rather than packaged equivalents. Ensure design capabilities exist for handling singulated waffle-pack dies. Evaluate thermal management requirements based on the specified die dimensions and metalization thicknesses before finalizing the selection.

Part Context

This component belongs to the CMPDM303NH series produced via the CP373 process. It represents a standard N-channel MOSFET structure intended for internal use by manufacturers requiring bare silicon for advanced packaging solutions. The product line focuses on providing high-volume wafer outputs with specific geometric tolerances.

Replacement Considerations

The official replacement part number is CP398X-CTLDM303N-CT. Transitioning requires validating the new CP398X wafer process specifications against existing designs.