CP398X-CPDM303NH-CT

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk

SKU:0555a2f2159e Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP398X-CPDM303NH-CT

Overview

The CP398X-CPDM303NH is a silicon N-Channel enhancement-mode MOSFET die designed for high-speed pulsed amplifier and driver applications. It features a drain-source voltage of 30 V, a continuous drain current of 3.6 A, and a maximum pulsed drain current of 14.4 A. The device operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a gate threshold voltage of 0.6 to 1.2 V, an on-resistance of 0.04 Ω at 4.5 V gate drive, and a total gate charge of 13 nC. Input capacitance is 590 pF, while output capacitance is 50 pF.

Feature Summary

Silicon N-Channel enhancement-mode MOSFET die optimized for high-speed pulsed amplifier and driver applications
Robust electrical ratings including 30 V drain-source voltage and 14.4 A maximum pulsed drain current
Low on-resistance and fast switching performance with turn-on time of 15 ns and turn-off time of 29 ns
High thermal stability supporting operation and storage temperatures from -55 to +150 °C

Applications

High-speed pulsed amplifiers
Driver circuits requiring rapid switching capabilities

Procurement Notes

Verify the specific suffix (CT or CM) required for your packaging needs, as these denote singulated die in waffle trays with varying inspection levels. Confirm plating options such as Tin/Lead or Lead-Free by adding the appropriate suffix during ordering. Contact Central Semiconductor directly for special orders like sawn wafers on metal frames or custom screening requirements.

Selection Notes

Select this component when designing circuits that demand high-speed switching and robust pulsed current handling. Ensure the application voltage does not exceed the 30 V drain-source rating and that the gate drive voltage remains within the 12 V limit. Consider the low input capacitance and fast transition times for efficiency in high-frequency driver stages.

Part Context

This bare die is manufactured by Central Semiconductor Corp. It is part of their discrete semiconductor portfolio, specifically engineered for integration into custom packages or direct bonding in power electronics. The die dimensions are 37.8 x 26 mils with a thickness of 5.5 mils, suitable for surface mount or wire-bond assembly processes.