CP398X-CPDM303NH-WN

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk

SKU:d0d72470c41b Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP398X-CPDM303NH-WN

Overview

The CP398X-CPDM303NH is a silicon N-Channel MOSFET die designed for high-speed pulsed amplifier and driver applications. It features a drain-source voltage of 30 V, gate-source voltage of 12 V, continuous drain current of 3.6 A, and maximum pulsed drain current of 14.4 A. The device operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a typical on-resistance of 0.04 Ω at VGS=4.5V and ID=1.8A, with a total gate charge of 13 nC. The die dimensions are 37.8 x 26 MILS with a thickness of 5.5 MILS.

Feature Summary

Enhancement-mode N-Channel silicon MOSFET structure optimized for high-speed pulsed amplifier and driver applications.

Applications

High speed pulsed amplifier circuits
Driver applications

Procurement Notes

Verify the specific suffix required for your packaging needs. The 'WN' suffix denotes an unsawn wafer that is 100% tested with reject die inked. Ensure compatibility with bare die handling processes and confirm plating options if Tin/Lead or Lead-Free specifications are mandatory for your assembly line.

Selection Notes

Select this component when designing circuits requiring a bare die N-Channel MOSFET with a 30 V rating and high-speed switching capabilities. Consider the physical dimensions of 37.8 x 26 MILS for layout constraints. Evaluate thermal management requirements given the operating junction temperature range up to +150 °C and the specific power dissipation limits inherent to bare die packages.

Part Context

This part is a bare die semiconductor component manufactured by Central Semiconductor Corp. Unlike packaged transistors, it requires custom mounting and wire bonding during integration into final modules or hybrid circuits. It belongs to the company's portfolio of discrete silicon devices intended for specialized electronic designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify pinout and electrical parameters against alternative suppliers before substitution.