CP773-CMPDM302PH-CT

Description：MOSFET P-CH 30V 2.4A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray

SKU:e9d9227cd216 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 2.4A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.6 nC @ 5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP773-CMPDM302PH-CT

Overview

The CP773-CMPDM302PH-CT is a silicon P-Channel MOSFET bare die designed for high-speed pulsed amplifier and driver applications. It features a 39 x 27 mils die size with a 7.5 mils thickness, housed in a singulated tray (waffle) pack. The device supports a drain-source voltage of 30 V and a continuous drain current of 2.4 A at 25°C. Electrical characteristics include a gate-source voltage rating of 12 V, an on-resistance of 0.091 Ω at VGS=4.5V, and a total gate charge of 9.6 nC. Operating junction temperature ranges from -55 to +150 °C.

Feature Summary

Engineered as a bare die component for integration into custom packaging or substrate designs.
Optimized for high-speed pulsed amplifier and driver applications requiring rapid switching.
Features aluminum top-side metalization and titanium/nickel/silver back-side metalization.

Applications

High-speed pulsed amplifiers
Driver circuits

Procurement Notes

Verify the specific wafer process suffix when ordering, as the CP773 process is discontinued. Confirm that the CT suffix denotes a waffle pack configuration for singulated dies. Ensure compatibility with the replacement CP798X process if sourcing new production units. Contact Central Semiconductor engineering for technical data regarding the transition between wafer processes.

Selection Notes

Select this component for applications requiring a discrete P-Channel MOSFET die rather than a packaged transistor. Consider the mechanical dimensions and metalization layers for wire bonding and thermal management requirements. Evaluate the electrical parameters against the specific load and switching speed demands of the target circuit design.

Part Context

Central Semiconductor Corp manufactures discrete semiconductors, including bare dies, surface mount, and through-hole devices. The company focuses on standard and custom niche products, providing support for various packaging options and environmental compliance. This part belongs to their portfolio of silicon-based field-effect transistors.