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Product Detailed Parameters
- Description：MOSFET P-CH 30V 11A DIE
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 8 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The CP775-CWDM3011P-WN is a bare die P-Channel MOSFET manufactured by Central Semiconductor Corp. It features a 90 x 60 mil die size and 5.5 mil thickness, packaged as an unsawn wafer (WN). The device supports a Drain-Source Voltage of 30V and Gate-Source Voltage of 20V. Continuous Drain Current is rated at 11A, with a maximum pulsed current of 50A. On-resistance is 20mΩ at VGS=10V/ID=11A and 30mΩ at VGS=4.5V/ID=8.5A. Total gate charge is 80nC. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Ultra-low profile design enabled by 5.5 mil die thickness for standard die attach wire bond processes.
- Low on-resistance characteristics optimized for power management efficiency.
- High drain current density capability supporting significant steady-state loads.
Applications
- Load switching
- Power management
- DC-DC conversion
Procurement Notes
Verify the specific suffix 'WN' corresponds to the unsawn wafer format required for your assembly process. Confirm that the CP775 wafer process status is acceptable for your production timeline, noting potential End of Life transitions. Ensure compatibility with existing wire bonding equipment specifications regarding the provided pad dimensions and metalization layers before finalizing procurement orders.
Selection Notes
Select this component when a bare die solution is preferred over packaged transistors to minimize footprint and thermal resistance in custom assemblies. Evaluate the 30V rating against system voltage peaks. Consider the 8-inch wafer format implications for manufacturing throughput. Verify that the enhancement-mode operation aligns with the intended gate drive circuitry requirements for the target application environment.
Part Context
This part belongs to the CWDM series of medium power P-Channel MOSFETs produced on the CP775 wafer process. It represents a semiconductor die intended for integration into custom packages or direct attachment to substrates. The product line focuses on high-density power applications requiring robust current handling within compact physical constraints defined by the die geometry.
Replacement Considerations
The CP775 wafer process is classified as End of Life. The official replacement is the CP802-CWDM3011P-WN. Review the CP802 datasheet for any mechanical or electrical differences before transitioning designs.
FAQ
What does the WN suffix indicate for this part?
The WN suffix denotes that the product is supplied as a full, unsawn wafer where 100% of the dies are tested and reject dies are inked.
Is this component available in a pre-packaged form?
No, this specific part number refers to a bare die. Other packaging options like singulated die in trays exist under different suffixes such as CT or CM.
