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Product Detailed Parameters
- Description：MOSFET P-CH 30V 11A DIE
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tray
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 8 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The CP802-CWDM3011P is a bare die P-Channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. Designed for power management and load switching, it features an ultra-low profile with a die thickness of 5.5 mils. The device supports a drain-source voltage of 30V and a continuous drain current of 11A. It utilizes standard die attach and wire bond processes for integration.
Feature Summary
- Ultra-low profile construction with a 5.5 mil die thickness suitable for space-constrained designs
- Low on-resistance and low gate charge characteristics for efficient switching performance
- High drain current density capability within a compact bare die format
Applications
- Load switching
- Power management
- DC-DC conversion
Procurement Notes
Verify the specific packaging suffix required for your assembly process. Options include unsawn wafers (WN), sawn wafers on plastic rings (WR), singulated die in trays (CT), or fully inspected trays (CM). Contact Central Semiconductor sales representatives directly to confirm availability and arrange custom screening or special wafer diffusions if needed.
Selection Notes
Select this component when a bare die solution is required for custom packaging or high-density mounting. Ensure the design accommodates standard die attach and wire bonding techniques. Verify that the operating junction temperature range of -55°C to +150°C meets the thermal requirements of the target application environment.
Part Context
This part belongs to the CWDM series of medium power MOSFETs from Central Semiconductor. Unlike packaged transistors, this item is a raw semiconductor die intended for direct integration into custom substrates or hybrid circuits. It shares electrical specifications with packaged variants but differs significantly in mechanical handling and thermal interface requirements.
Replacement Considerations
Direct replacements must be bare die P-Channel MOSFETs with compatible 30V VDS and 11A ID ratings. Verify pinout compatibility regarding source and gate bonding pad dimensions. Consult manufacturer documentation for equivalent bare die offerings from other suppliers.
