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The CPC3703CTR is an N-channel depletion-mode field-effect transistor manufactured by IXYS Integrated Circuits Division, a Littelfuse company. It utilizes a third-generation vertical DMOS process to deliver high-voltage performance in a compact SOT-89 package. The device features a drain-to-source breakdown voltage of 250V and a maximum on-state resistance of 4 ohms at 25°C. It supports a saturated drain-to-source current of 360mA with a gate-to-source voltage rating of ±15V. Operating within an ambient temperature range of -55°C to +125°C, the component offers low RDS(on) characteristics at cold temperatures and high input impedance.
Verify that the ordering suffix 'CTR' corresponds to the tape and reel packaging configuration containing 1000 units per reel as specified in the manufacturer documentation. Confirm the component originates from IXYS Integrated Circuits Division under the Littelfuse portfolio. Ensure handling procedures adhere to MSL Level 1 standards and JESD-625 ESD sensitivity guidelines during assembly.
Select this component for designs requiring a normally-on switch or solid-state relay application where high voltage isolation is necessary. The depletion mode characteristic allows for direct drive capabilities without complex biasing circuits. Consider the SOT-89 package constraints and thermal dissipation requirements when integrating into high-power systems operating across wide temperature ranges.
This part belongs to the CPC3703 series of N-channel depletion-mode FETs. It is specifically engineered for industrial and telecommunications environments where reliability and high breakdown voltage are critical. The device leverages proprietary silicon gate technology to achieve world-class MOSFET performance within an economical manufacturing process.
Consult official Littelfuse/IXYS documentation for verified substitute part numbers. Cross-referencing should be performed against specific electrical parameters such as V(BR)DSX, RDS(on), and package dimensions to ensure functional compatibility.