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Product Detailed Parameters
- Description：MOSFET P-CH
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The CPH3307-TL-E is a P-channel silicon MOSFET manufactured by Sanyo Semicon Device. It features an ultrahigh-speed switching capability designed for demanding applications. The device operates in enhancement mode with a built-in diode configuration within a small outline package. Key electrical specifications include a minimum drain-source breakdown voltage of 20 V and a maximum continuous drain current of 5 A. The component exhibits a maximum drain-source on-resistance of 0.037 Ω, ensuring efficient power handling. It supports a maximum power dissipation of 1.2 W and functions at operating temperatures up to 150 °C.
Feature Summary
- Ultrahigh-speed switching performance optimized for rapid transition applications
- P-channel silicon MOSFET technology with built-in diode integration
- Enhancement mode operation suitable for low-side or high-side control circuits
Applications
- Ultrahigh-speed switching applications requiring fast response times
- Power management circuits utilizing P-channel MOSFET configurations
- Electronic systems needing compact surface-mount semiconductor solutions
Procurement Notes
Verify the manufacturer designation as Sanyo Semicon Device when sourcing this component. Confirm the specific suffix TL-E matches the required packaging and lead-free compliance standards. Ensure the procurement channel provides valid RoHS documentation. Cross-reference the part number against official distributor catalogs to avoid counterfeit units. Validate that the received inventory matches the specified SO-8G package type and pin configuration.
Selection Notes
Select this component for designs requiring a 20 V breakdown voltage and 5 A current capacity in a compact form factor. The low on-resistance of 0.037 Ω makes it suitable for efficiency-critical power paths. Consider the 150 °C maximum operating temperature for thermal management planning. The built-in diode feature may simplify circuit topology by reducing external component count. Ensure the application voltage and current ratings remain within the specified absolute maximum limits.
Part Context
This component belongs to the category of discrete semiconductors, specifically single field-effect transistors. It is classified under metal-oxide semiconductor field-effect transistors (MOSFETs). The device utilizes silicon technology and is housed in a plastic epoxy rectangular package. It falls under the broader class of power management integrated circuits and discrete switches used in consumer and industrial electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative P-channel MOSFETs based on matching voltage, current, and resistance specifications before substitution.
