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Product Detailed Parameters
- Description：PCH 2.5V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi CPH3313-TL-E is a P-channel silicon MOSFET designed for high-efficiency power switching applications. It features a compact CPH surface-mount package with dimensions of 2.9 x 1.6 x 0.9 mm. The device supports low-voltage drive requirements, specifically optimized for 2.5V gate drive operation. Key electrical characteristics include a maximum drain-source voltage rating and current handling capabilities suitable for various load management tasks. It utilizes advanced MBIT processes to ensure robust performance.
Feature Summary
- Optimized for 2.5V gate drive applications to enhance compatibility with modern logic levels
- Utilizes advanced MBIT process technology for improved reliability and performance
- Features large current capacity for effective power handling in compact designs
- Achieves low collector-to-emitter saturation voltage to minimize power loss
Applications
- Load switch circuits requiring low-side or high-side control
- Power management units in portable electronic devices
- Battery protection and distribution systems
- General purpose power switching in consumer electronics
Procurement Notes
Verify the specific suffix and tape-and-reel configuration when ordering to ensure compatibility with automated assembly processes. Confirm that the requested quantity matches the standard packaging specifications provided by the manufacturer. Cross-reference the full part number including any environmental or lead-free designations to avoid discrepancies during procurement and inventory management.
Selection Notes
Select this component when a P-channel MOSFET with low gate drive voltage requirements is necessary. The CPH package offers a small footprint ideal for space-constrained PCB layouts. Ensure the application voltage and current demands remain within the specified absolute maximum ratings to maintain device integrity and long-term operational stability under varying thermal conditions.
Part Context
This component belongs to onsemi's portfolio of discrete power semiconductors, specifically within the single FET and MOSFET category. It is engineered using MBIT process technology, which contributes to its efficiency and switching speed. The CPH series is designed to meet the demands of modern electronics requiring high density and reliable power control solutions.
Replacement Considerations
Direct substitutes may include other P-channel MOSFETs in the CPH package from onsemi, such as the CPH3314-TL-E. Verify pinout compatibility and electrical parameters before substitution. Alternative manufacturers may offer similar packages, but functional equivalence must be confirmed against the original datasheet specifications.
