CPH3325-TL-E

CPH3325-TL-E

$0.12
  • Description:PCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk

SKU:9448d0e92a18 Category: Brand:

  
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Product Detailed Parameters

  • Description:PCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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CPH3325-TL-E

Overview

The CPH3325-TL-E is an NPN bipolar junction transistor manufactured by onsemi. It utilizes a surface-mount CPH package with dimensions of 2.9 x 1.6 x 0.9 mm. The device supports a maximum DC collector current of 5 A and a maximum collector-emitter voltage of 50 V. Key electrical ratings include a maximum collector-base voltage of 100 V, a maximum emitter-base voltage of 6 V, and a maximum power dissipation of 900 mW. It operates at frequencies up to 330 MHz and has a maximum operating temperature of +150 °C.

Feature Summary

  • High-frequency operation capability suitable for RF amplifier applications
  • Robust thermal performance with a maximum junction temperature of +150 °C
  • Compact surface-mount footprint designed for automated assembly

Applications

  • High-frequency amplification circuits
  • RF signal processing stages
  • General-purpose switching applications in consumer electronics

Procurement Notes

Verify the specific suffix (TL-E) against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure that the CPH package outline matches your PCB footprint design requirements before finalizing procurement orders.

Selection Notes

Select this component when high current handling combined with high-frequency response is required in a compact form factor. Compare the 50 V collector-emitter rating against circuit supply voltages to ensure adequate headroom. Verify that the 900 mW power dissipation limit aligns with the thermal management strategy of the target application.

Part Context

This part belongs to onsemi's CPH series of small-signal transistors. These devices are engineered for high-speed switching and amplification tasks. The CPH package provides a standardized mechanical profile compatible with standard SMT processes, facilitating integration into dense printed circuit board layouts.

Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching 5 A current and 50 V voltage ratings in similar surface-mount packages.

CPH3325-TL-ECPH3325-TL-E
$0.12
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