CPH3338-TL-E

CPH3338-TL-E

$0.15
  • Description:PCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk

SKU:38de3d823842 Category: Brand:

  
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Product Detailed Parameters

  • Description:PCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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CPH3338-TL-E

Overview

The CPH3338-TL-E is an NPN transistor manufactured by onsemi, designed for surface mount applications. It utilizes the compact CPH package with dimensions of 2.9 x 1.6 x 0.9 mm. The device supports a maximum DC collector current of 5 A and a maximum collector-emitter voltage of 50 V. Key electrical specifications include a maximum collector-base voltage of 100 V, a maximum emitter-base voltage of 6 V, and a maximum power dissipation of 900 mW. It features a single transistor configuration with three pins and operates at a maximum frequency of 330 MHz. The component is rated for a maximum operating temperature of +150 °C.

Feature Summary

  • High current handling capability suitable for power switching applications
  • Compact surface-mount footprint for space-constrained designs
  • Robust voltage ratings for reliable operation in various circuits

Applications

  • General-purpose switching circuits
  • Power management modules
  • Amplifier stages requiring high current drive

Procurement Notes

Verify the specific suffix TL-E against official datasheets to confirm pinout and electrical characteristics match design requirements. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure thermal management strategies align with the 900 mW power dissipation limit under expected operating conditions.

Selection Notes

Select this component when a single NPN transistor with 5 A current capacity and 50 V breakdown voltage is required in a small outline package. Consider the 330 MHz transition frequency for medium-speed switching needs. Evaluate thermal performance relative to the 900 mW dissipation rating in the final assembly environment.

Part Context

This part belongs to onsemi's CPH series of surface-mount transistors. The series offers various configurations including NPN, PNP, and dual types. The CPH package provides a standardized footprint for automated assembly processes while maintaining robust electrical performance for discrete semiconductor applications.

Replacement Considerations

Consult official substitution guides for verified equivalents. Generic replacements may differ in pinout or electrical limits.

CPH3338-TL-ECPH3338-TL-E
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