CPH3348-TL-E

$0.21

Description：P-CHANNEL MOSFET
Series：-
Mfr：Sanyo
Package：Bulk

SKU:6045cc196050 Category: Single FETs, MOSFETs Brand: Sanyo

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Product introduction

Product Detailed Parameters

Description：P-CHANNEL MOSFET
Series：-
Mfr：Sanyo
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：70mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：405 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：3-CPH
Package / Case：SC-96

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CPH3348-TL-E

Overview

The CPH3348-TL-E is a P-Channel Power MOSFET manufactured by Sanyo (now onsemi). It features a 12 V drain-source breakdown voltage and supports a continuous drain current of 3 A. The device utilizes an SOT-23-3 surface-mount package with a mounting height of 0.9 mm. Key electrical characteristics include a maximum on-resistance of 215 mΩ at a gate-source voltage of -4.5 V, a threshold voltage range of 1.4 V to 1.8 V, and a total gate charge of 5.6 nC. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Adopts MBIT process technology for high-speed switching performance
Features low collector-to-emitter saturation voltage for efficient power handling
Ultrasmall package facilitates miniaturization in end products

Applications

DC/DC converter circuits
Relay driver applications
Motor driver systems
Lamp driver implementations

Procurement Notes

Verify the manufacturer designation carefully, as Sanyo Semiconductor operations were acquired by onsemi. Confirm that the specific suffix matches the required tape-and-reel packaging configuration. Ensure the component meets RoHS compliance standards for your target market. Cross-reference the datasheet revision date to confirm the technical specifications align with your design requirements before finalizing procurement.

Selection Notes

Select this component when a compact P-Channel MOSFET is required for low-voltage switching applications. The 12 V rating suits logic-level control interfaces. Evaluate the 215 mΩ on-resistance against thermal dissipation needs in the specific circuit layout. The SOT-23-3 package is suitable for space-constrained designs requiring surface-mount assembly.

Part Context

This transistor belongs to the CPH series of epitaxial planar silicon transistors designed for general-purpose switching. The series emphasizes high allowable power dissipation and adoption of advanced manufacturing processes. These components are engineered to replace older discrete solutions in modern portable electronics and automotive subsystems where size and efficiency are critical constraints.