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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2.5A 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：156mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：172 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi CPH3355-TL-W is a single-channel P-Channel enhancement mode MOSFET designed for surface-mount applications. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 2.5 A. The device exhibits a maximum on-resistance of 156 mOhms and operates with a gate-source voltage range of ±20 V. Packaged in an SOT-23-3 outline, it handles 1 W of power dissipation and functions within a temperature range of -55 °C to +150 °C.
Feature Summary
- P-Channel enhancement mode configuration optimized for low-side or high-side switching applications
- SOT-23-3 surface-mount package design facilitating compact circuit board layouts
- Silicon-based construction ensuring stable thermal performance up to 150 °C
Applications
- General purpose power switching circuits
- Low-voltage load management systems
- Battery protection modules
Procurement Notes
Verify component authenticity through authorized distribution channels due to the part's end-of-life status. Confirm RoHS and REACH compliance details via official datasheets before integration. Ensure storage conditions align with semiconductor handling standards to maintain junction integrity during assembly processes.
Selection Notes
Select this component when a P-Channel MOSFET with 30 V rating and 2.5 A capacity is required in an SOT-23-3 package. Evaluate thermal resistance requirements against the 1 W dissipation limit. Compare on-resistance values with alternative devices if lower conduction losses are critical for the specific application efficiency targets.
Part Context
This device belongs to the CPH3355 series of power MOSFETs manufactured by onsemi. The series focuses on providing reliable switching solutions for portable and industrial electronics requiring small form factors. The TL-W suffix indicates specific tape-and-reel packaging configurations for automated assembly lines.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering alternative components from other manufacturers.
