CPH3360-TL-H

CPH3360-TL-H

$0.14
  • Description:MOSFET P-CH 30V 1.6A 3CPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk

SKU:7c285b796cfc Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 1.6A 3CPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:303mOhm @ 800mA, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:2.2 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:82 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):900mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-CPH
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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CPH3360-TL-H

Overview

The CPH3360-TL-H is a single P-Channel Power MOSFET manufactured by onsemi using trench technology. It features a drain-to-source voltage of -30 V and a continuous drain current of -1.6 A. The device exhibits a maximum static drain-to-source on-state resistance of 303 mΩ at VGS = -10 V, with higher resistance values at lower gate voltages. Key switching parameters include a total gate charge of 2.2 nC, turn-on delay time of 4.0 ns, rise time of 3.3 ns, turn-off delay time of 12 ns, and fall time of 5.4 ns. The component operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

  • Utilizes trench technology designed to minimize gate charge and achieve low on-resistance for efficient power switching.
  • Capable of operation with a 4V drive signal, supporting applications requiring low gate charge driving capabilities.

Applications

  • DC/DC Converter

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The TL-H suffix indicates a Tape & Reel configuration with a quantity of 3,000 units per reel in an SC-59 (SOT-23) package. Confirm RoHS compliance status through the manufacturer's sustainability resources before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a single P-Channel MOSFET with a -30 V breakdown voltage and -1.6 A continuous current rating. The low gate charge of 2.2 nC makes it suitable for circuits driven by logic levels or where minimizing gate drive power is critical. Ensure thermal management accommodates the specified junction temperature limits during operation.

Part Context

This device belongs to the CPH3360 series of Power MOSFETs produced by onsemi. The product line utilizes trench technology to optimize performance metrics such as on-resistance and switching speed. The CPH3360-TL-H variant specifically denotes the surface-mount SOT-23 package configuration intended for automated assembly processes.

Replacement Considerations

Consult official cross-reference data for verified substitutes. No confirmed substitute part numbers are provided in the source material.

FAQ

What is the typical forward transconductance of the CPH3360?

The forward transconductance (gFS) is typically 1.3 S when measured at VDS = -10 V and ID = -0.8 A.

How does the on-state resistance vary with gate voltage?

The maximum RDS(on) increases as the gate voltage decreases: 303 mΩ at -10 V, 532 mΩ at -4.5 V, and 617 mΩ at -4 V.

CPH3360-TL-HCPH3360-TL-H
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