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The CPH3360-TL-H is a single P-Channel Power MOSFET manufactured by onsemi using trench technology. It features a drain-to-source voltage of -30 V and a continuous drain current of -1.6 A. The device exhibits a maximum static drain-to-source on-state resistance of 303 mΩ at VGS = -10 V, with higher resistance values at lower gate voltages. Key switching parameters include a total gate charge of 2.2 nC, turn-on delay time of 4.0 ns, rise time of 3.3 ns, turn-off delay time of 12 ns, and fall time of 5.4 ns. The component operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix against official documentation to confirm packaging details. The TL-H suffix indicates a Tape & Reel configuration with a quantity of 3,000 units per reel in an SC-59 (SOT-23) package. Confirm RoHS compliance status through the manufacturer's sustainability resources before finalizing procurement specifications.
Select this component for designs requiring a single P-Channel MOSFET with a -30 V breakdown voltage and -1.6 A continuous current rating. The low gate charge of 2.2 nC makes it suitable for circuits driven by logic levels or where minimizing gate drive power is critical. Ensure thermal management accommodates the specified junction temperature limits during operation.
This device belongs to the CPH3360 series of Power MOSFETs produced by onsemi. The product line utilizes trench technology to optimize performance metrics such as on-resistance and switching speed. The CPH3360-TL-H variant specifically denotes the surface-mount SOT-23 package configuration intended for automated assembly processes.
Consult official cross-reference data for verified substitutes. No confirmed substitute part numbers are provided in the source material.
The forward transconductance (gFS) is typically 1.3 S when measured at VDS = -10 V and ID = -0.8 A.
The maximum RDS(on) increases as the gate voltage decreases: 303 mΩ at -10 V, 532 mΩ at -4.5 V, and 617 mΩ at -4 V.