CPH3362-TL-W

CPH3362-TL-W

  • Description:MOSFET P-CH 100V 700MA 3CPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:90190351883c Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 100V 700MA 3CPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:1.7Ohm @ 700mA, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.7 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:142 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-CPH
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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CPH3362-TL-W

Overview

The CPH3362-TL-W is a single P-channel enhancement mode power MOSFET manufactured by onsemi. It features a -100V drain-to-source breakdown voltage and supports a continuous DC drain current of -0.7A. The device exhibits a typical on-resistance of 1.3Ω at VGS=-10V and ID=-0.7A, with a maximum of 1.7Ω under the same conditions. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 1W of power when mounted on a ceramic substrate. The component is housed in an SC-59 (SOT-23) package.

Feature Summary

  • Designed for 4V drive applications to optimize switching performance
  • Compliant with halogen-free material requirements
  • Optimized for low gate charge to support fast switching speeds

Applications

  • Power management circuits requiring high-voltage P-channel switching
  • Battery protection systems utilizing low-current isolation
  • General-purpose load switching in industrial control modules

Procurement Notes

Verify the specific ordering suffix TL-W to confirm the reel quantity of 3,000 pieces per reel and Pb-free/halogen-free status. Confirm that the device marking corresponds to CPH3 or SC-59 identifiers. Ensure handling procedures account for the specified ESD immunity rating below 200V using machine model testing standards during assembly.

Selection Notes

Select this component when a single P-channel switch is required with a -100V voltage rating and approximately 0.7A current capacity. The device is suitable for designs needing low on-resistance at standard logic levels while maintaining compatibility with 4V drive signals. Verify thermal constraints against the 125°C/W junction-to-ambient resistance rating for the intended PCB footprint.

Part Context

This part belongs to the CPH3362 series of power MOSFETs from onsemi. It utilizes silicon technology and is packaged in the SC-59 form factor, also known as SOT-23 or TO-236. The device is designed as a standalone single-channel transistor rather than a dual or array configuration.

Replacement Considerations

The datasheet lists ENA2321A as the associated ordering number. No other substitute part numbers are documented in the provided source material.

FAQ

What is the maximum pulsed drain current capability?

The device supports a pulsed drain current of -2.8A, provided the pulse width is less than or equal to 10µs and the duty cycle does not exceed 1%.

How is the gate threshold voltage defined?

The gate threshold voltage is specified between -1.2V and -2.6V when measured with a drain-to-source voltage of -10V and a drain current of -1mA.

What are the switching time characteristics?

The turn-on delay time is typically 3.9ns with a rise time of 3.4ns. The turn-off delay time is typically 28ns with a fall time of 12ns.

CPH3362-TL-WCPH3362-TL-W

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