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The onsemi CPH3437-TL-E is an N-channel MOSFET designed for RF applications. It features a surface-mount CPH package with six pins and dimensions of 2.9mm length by 0.9mm height. The device supports a drain-source voltage (Vds) of 25V and operates within a temperature range of -55°C to +150°C. Maximum power dissipation is rated at 400mW, with a gate drive series specification of 2.5V.
Verify the specific datasheet revision and electrical characteristics directly from onsemi documentation before integration. Confirm that the CPH package footprint matches the target PCB layout. Ensure thermal management strategies align with the 400mW power dissipation rating under expected operating conditions.
Select this component for RF designs requiring an N-channel MOSFET with a 25V breakdown voltage. The 2.5V drive series specification indicates compatibility with low-voltage logic interfaces. Consider the small CPH package size when evaluating board space constraints and assembly capabilities.
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the RF transistor category. It complements other high-frequency components used in modern wireless infrastructure and consumer electronics. The CPH packaging standardizes mounting for compact RF modules.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters against potential alternatives using official manufacturer cross-reference tools.