ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：NCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The onsemi CPH3438-TL-E is an N-channel MOSFET designed for RF applications. It belongs to the 4V Drive Series, featuring a typical threshold voltage of 1.2V. The device supports a drain-source voltage of 40V and utilizes surface mount packaging.
Feature Summary
- Optimized for low gate drive voltage operation
- Designed for radio frequency circuit integration
Applications
- RF power amplification stages
- Low voltage switching circuits
Procurement Notes
Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before implementation. Confirm that the 4V drive optimization aligns with the system's logic levels. Ensure thermal management meets the component's dissipation requirements in the final assembly.
Selection Notes
Select this component when a low threshold voltage is required for efficient switching at 4V gate drive levels. The 40V rating provides adequate headroom for specific RF load conditions. Verify package compatibility with the PCB footprint during the design phase.
Part Context
This part is part of onsemi's discrete transistor portfolio, specifically categorized under RF MOSFETs. It serves as a building block for high-frequency signal processing and power control modules within communication equipment.
Replacement Considerations
Cross-reference with other 40V N-channel MOSFETs from the same series. Ensure substitute parts maintain similar threshold voltage and RF performance characteristics.
