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Product Detailed Parameters
- Description：MOSFET N-CH 30V 4A 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：50mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：4.7 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：430 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CPH3448-TL-H is an N-channel silicon MOSFET switching device manufactured by onsemi. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 4 A. The component exhibits a maximum on-resistance of 50 mΩ. It is housed in a surface-mount SOT-23 (SC-74) package with three terminals. The device operates in enhancement mode and includes a built-in diode configuration.
Feature Summary
- N-channel silicon construction for general-purpose switching applications
- Integrated body diode configuration within the single transistor structure
- Surface-mount design optimized for automated assembly processes
Applications
- General-purpose low-voltage power switching circuits
- DC-DC converter output stages
- Load switching in portable electronic devices
Procurement Notes
Verify the specific suffix TL-H against the manufacturer's latest documentation to confirm pinout orientation and tape-and-reel specifications. Confirm RoHS compliance status directly with onsemi as regulatory updates may affect material declarations. Ensure the ordering part number matches the exact electrical characteristics required for the target circuit design.
Selection Notes
Select this component when a compact N-channel MOSFET with moderate current handling and low on-resistance is required. The SOT-23 package suits space-constrained designs. Verify that the 30 V voltage rating provides sufficient margin for the application's supply voltage. Consider the thermal performance relative to the expected continuous current load.
Part Context
This device belongs to the family of small-signal and general-purpose MOSFETs offered by onsemi. It utilizes standard silicon planar technology. The product line targets cost-sensitive consumer and industrial electronics requiring reliable switching performance in minimal footprint packages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult onsemi technical support or authorized distributors for verified cross-reference information.
