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Product Detailed Parameters
- Description：MOSFET N-CH 35V 3A 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：35 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：104mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：186 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi CPH3455-TL-H is a single N-channel power MOSFET manufactured using trench technology. It features a drain-to-source voltage of 35 V and a continuous drain current of 3 A. The device offers low on-resistance, with maximum values of 104 mΩ at VGS = 10 V, 173 mΩ at VGS = 4.5 V, and 208 mΩ at VGS = 4 V. Total gate charge is 4 nC at VGS = 10 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 1 W when mounted on a ceramic substrate.
Feature Summary
- Utilizes trench technology designed to minimize gate charge and achieve low on-resistance.
- Optimized for applications requiring low gate charge driving or low on-resistance performance.
- Compliant with Pb-Free, Halogen-Free, and RoHS standards.
Applications
- Load Switch
- Motor Drive
Procurement Notes
Verify the specific ordering suffix TL-H against the manufacturer's official documentation to confirm package type (CPH3) and shipping format (Tape & Reel). Confirm that the component meets all applicable environmental compliance requirements such as RoHS and REACH before finalizing procurement specifications.
Selection Notes
Select this component for circuits requiring an N-channel enhancement mode MOSFET with a 35 V breakdown voltage. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Verify thermal management capabilities, as power dissipation is limited to 1 W under standard mounting conditions.
Part Context
This part belongs to the CPH3 series of single N-channel power MOSFETs from onsemi. It is housed in a CPH3 package (SC-59/SOT-23/TO-236), which provides a compact form factor suitable for surface-mount applications. The device is engineered for general-purpose switching tasks where efficiency and speed are prioritized.
Replacement Considerations
Consult the manufacturer's datasheet for verified substitute part numbers. Cross-reference electrical parameters such as V(BR)DSS, ID, and RDS(on) to ensure compatibility with existing circuit designs.
