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The CPH3910-TL-E is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi, designed for surface-mount applications. It features a maximum drain-source voltage of 25 V and a continuous drain current rating of 50 mA. The device operates with a maximum power dissipation of 400 mW and supports junction temperatures up to +150 °C. Key electrical characteristics include a gate-source cutoff voltage of 1.8 V at 100 µA and a maximum input capacitance of 6 pF at 5 V. Packaged in the compact 3-CPH form factor, it is suitable for low-power signal processing and switching tasks.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS3 compliance and REACH status prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain package integrity during assembly processes.
Select this component when a compact N-channel JFET with 25 V breakdown and 50 mA current capability is required. Evaluate thermal management needs against the 400 mW dissipation limit. Compare input capacitance specifications against circuit bandwidth requirements to ensure signal integrity preservation.
This part belongs to the CPH series of surface-mount transistors from onsemi. The 3-CPH package provides a small footprint suitable for dense PCB layouts. It serves as a discrete semiconductor solution within broader analog and mixed-signal system designs requiring reliable field-effect transistor performance.
Public documentation lists MMBFJ108 as a substitute option. Verify pinout compatibility and electrical parameter alignment before implementation. Cross-reference datasheet specifications to ensure functional equivalence in the target application environment.