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The CPH5518-TL-H is a complementary dual bipolar transistor from onsemi, integrating a PNP and an NPN transistor within a single CPH5 package. It supports a maximum collector-to-emitter voltage of 50 V and a continuous collector current of 1.0 A, with a pulsed current rating of 3.0 A. The device features a minimum DC current gain (hFE) of 200 at 100 mA and a gain-bandwidth product of 420 MHz at 300 mA. Total power dissipation reaches 1.2 W when mounted on a ceramic substrate. The component operates up to a junction temperature of 150 °C and includes Pb-free and halogen-free material compliance.
Verify the specific ordering suffix TL-H confirms halogen-free status as documented in the datasheet. Confirm the package type is CPH5 and the marking code corresponds to TL. Ensure the procurement quantity aligns with the standard reel size of 3,000 pieces per reel specified by the manufacturer.
Select this component for applications requiring a compact complementary pair with low saturation voltage. Verify that the required collector current does not exceed 1.0 A continuous or 3.0 A pulsed limits. Ensure the operating voltage remains within the 50 V collector-to-emitter rating and consider thermal management for power dissipation near the 1.2 W limit.
This part belongs to the CPH5518 series of complementary dual bipolar transistors manufactured by onsemi. It is functionally equivalent to combinations of CPH3116 and CPH3216 chips encapsulated together. The device utilizes the CPH5 package, also identified as SC-74A or SOT-25, designed for surface-mount technology.
The datasheet states the internal configuration is equivalent to the CPH3116 and CPH3216. Designers may evaluate these individual components if separate NPN and PNP devices are preferred, though the CPH5518 offers a more compact solution.