CPH5520-TL-E

Overview

The CPH5520-TL-E is a complementary dual bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP silicon transistor in a single SOT-23-5 surface-mount package. The device supports a maximum collector current of 2 A for both polarities. It features a collector-emitter breakdown voltage (VCEO) of 50 V and a collector-base breakdown voltage (VCBO) of 80 V for the NPN element, with corresponding ratings for the PNP element. The total power dissipation is rated at 1.2 W. This configuration is designed for high-frequency amplifier applications requiring matched complementary pairs.

Feature Summary

• Complementary NPN and PNP pair integrated in a single compact package
• High collector current capability of 2 A per element
• Low saturation voltage characteristics for efficient switching
• Surface-mount SOT-23-5 footprint for automated assembly

Applications

• High-frequency amplifier circuits
• Complementary push-pull output stages
• Driver circuits for power loads
• Analog signal processing modules

Procurement Notes

Verify the specific ordering suffix to ensure the correct tape-and-reel packaging quantity matches production requirements. Confirm that the SOT-23-5 thermal pad grounding aligns with the PCB layout design to maintain optimal heat dissipation within the 1.2 W rating. Cross-reference the manufacturer's latest datasheet for any updates to absolute maximum ratings or recommended operating conditions prior to finalizing the bill of materials.

Selection Notes

Select this component when a matched NPN/PNP pair is required for high-current analog or RF applications. The 2 A current rating distinguishes it from standard small-signal transistors, making it suitable for driving moderate loads directly. Ensure the 50 V voltage rating exceeds the peak circuit voltages. The SOT-23-5 package offers a space-saving alternative to discrete dual-transistor solutions while maintaining performance consistency between the paired elements.

Part Context

This part belongs to onsemi’s CPH series of complementary bipolar transistor arrays. These devices are engineered to provide matched electrical characteristics between the NPN and PNP elements, ensuring symmetry in push-pull configurations. The series utilizes silicon planar technology to deliver reliable performance in various consumer and industrial electronic applications requiring efficient power handling in a small form factor.

Replacement Considerations

Direct pin-compatible substitutes may include other complementary BJT arrays in SOT-23-5 packages with similar 2 A current and 50 V voltage ratings. Verify that any replacement maintains the same VCBO and VEBO specifications to prevent breakdown issues. Consult the manufacturer's cross-reference tools for validated alternatives that meet the same thermal and electrical constraints.