CPH5819-TL-E

$0.12

Description：NCH+SBD 4V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk

SKU:bda8156a09d2 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH+SBD 4V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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CPH5819-TL-E

Overview

The CPH5819-TL-E is an N-channel MOSFET with an integrated Schottky barrier diode (SBD) from onsemi, designed for low-voltage drive applications. It features a maximum drain-source voltage of 4V and a continuous drain current of 20A. The device incorporates a single FET topology optimized for efficiency in power management circuits. Key electrical characteristics include a gate charge of 20pF and a total power dissipation capability of 800mW. This component is engineered to provide robust performance in compact power systems requiring high current density at low voltages.

Feature Summary

Integrates an N-channel MOSFET with a Schottky barrier diode for combined switching and freewheeling functions.
Optimized for low-voltage drive series applications to enhance system efficiency.
Designed for high-current handling capabilities within a compact footprint.

Applications

Low-voltage DC-DC converter modules
Point-of-load (POL) power regulation stages
Battery-powered portable electronic devices

Procurement Notes

Verify the specific datasheet revision and ordering information directly from onsemi or authorized distributors before procurement. Ensure that the 4V rating and 20A current specifications align with your circuit design requirements. Confirm package type and thermal characteristics match your PCB layout constraints. Check for any recent product change notifications regarding manufacturing updates.

Selection Notes

Select this component when designing low-voltage power stages requiring integrated synchronous rectification or freewheeling diode functionality. The 4V rating suits applications with supply voltages near or below this threshold. Consider the 800mW power dissipation limit for thermal management planning. Evaluate the 20A current capacity against peak load demands to ensure reliable operation under all expected conditions.

Part Context

This part belongs to onsemi's Single FETs and MOSFETs category, specifically tailored for intelligent power solutions. It represents the company's focus on scalable performance for mission-critical power systems. The integration of the SBD reflects trends toward miniaturization and efficiency in modern power electronics, supporting industrial and consumer applications where space and energy conservation are paramount.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence if considering cross-references. Ensure any substitute maintains the 4V drive series characteristics and integrated diode functionality required by the original design.

FAQ

What is the primary advantage of integrating a Schottky barrier diode with the MOSFET?

The integration allows for combined switching and freewheeling functions in a single package, reducing component count and board space while improving overall system efficiency.