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The onsemi CPH5902G-TL-E is a composite semiconductor device integrating an N-channel JFET and an NPN bipolar transistor within a single CPH package. The JFET section operates with a drain-source voltage of 15 V and a drain current range of 10 to 32 mA. The NPN transistor section supports a collector-emitter voltage of 50 V and a collector current of 150 mA. This configuration allows for high mounting efficiency by combining two distinct active components in one surface-mount footprint.
Verify the specific suffix (G or H) against the design specification, as both variants exist within the CPH5902 family. Confirm that the shared drain-emitter terminal configuration aligns with the circuit topology requirements. Ensure the operating conditions remain within the specified 15 V JFET and 50 V transistor limits during procurement validation.
Select this component when space constraints require combining a JFET input stage with a BJT output or buffer stage. The shared terminal architecture simplifies layout compared to discrete implementations. Verify that the 10-32 mA JFET current range meets the biasing needs of the intended amplifier application before finalizing the selection.
This part belongs to the CPH series of composite transistors manufactured by onsemi. These devices are designed to replace multiple discrete components with a single surface-mount solution. The CPH5902 specifically combines JFET and NPN technologies to provide versatile amplification capabilities in a compact form factor suitable for consumer and industrial electronics.
The CPH5902H-TL-E is a documented variant within the same product family. Both parts share identical electrical characteristics and pin configurations. Substitution between G and H suffixes should be verified against specific manufacturing lot or material specifications if critical.