SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi CPH5902H-TL-E is a P-channel bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector-emitter voltage of -50 V and a continuous collector current of -3 A. The device operates within a junction temperature range up to +150 °C and has a maximum power dissipation of 1.3 W. Packaged in the compact 6-CPH (SOT-457) format, it offers a transition frequency of 390 MHz and a DC current gain of at least 200 at specified test conditions.
Verify the specific suffix 'TL-E' against official datasheets to confirm tape-and-reel packaging and lead-free compliance. Ensure the ordering part number matches the exact electrical specifications required for the design. Cross-reference with manufacturer documentation to validate availability and lifecycle status before finalizing procurement plans.
Select this component when a PNP BJT with -50 V rating and -3 A capacity is needed in a small SOT-457 package. Consider the 1.3 W power dissipation limit and thermal resistance during layout planning. Verify that the required current gain meets the application's drive requirements at the intended operating point.
This device belongs to the CPH series of surface-mount bipolar transistors from onsemi. These components are engineered for general-purpose switching and amplification tasks where space efficiency and high voltage tolerance are critical. The 6-CPH package provides a balance between thermal performance and board real estate constraints.
Consult official substitution guides for equivalent PNP transistors in SOT-457 packages with matching -50 V and -3 A ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.