CPH5905G-TL-E

CPH5905G-TL-E

$0.17
  • Description:TRANS NPN/MOSFET N-CH CPH5
  • Series:-

SKU:07829c12d30c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/MOSFET N-CH CPH5
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Bulk
  • Transistor Type:NPN, N-Channel
  • Applications:General Purpose
  • Voltage - Rated:50V NPN, 15V N-Channel
  • Current Rating (Amps):150mA NPN, 50mA N-Channel
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package:5-CPH

Download product information

CPH5905G-TL-E

Overview

The CPH5905G-TL-E is a composite semiconductor device integrating an N-Channel JFET and an NPN Bipolar Transistor within a single CPH5 package. The JFET section provides a drain-to-source voltage of 15 V, with a drain current (IDSS) ranging from 10.0 to 20.0 mA. The NPN transistor supports a collector-to-emitter voltage of 50 V and a maximum collector current of 150 mA. Total power dissipation is rated at 500 mW on a ceramic board. The device features shared drain and emitter terminals, facilitating efficient mounting.

Feature Summary

  • Composite architecture combining an N-Channel JFET and an NPN Bipolar Transistor in one package
  • Shared drain and emitter terminals for improved mounting efficiency
  • High-speed switching capabilities with specified turn-on and fall times
  • Low noise figure suitable for sensitive signal amplification

Applications

  • High-frequency amplifier circuits
  • AM amplifier applications
  • Low-frequency amplifier stages

Procurement Notes

Verify the specific IDSS rank required for the design, as the G suffix denotes a 10.0 to 20.0 mA range. Confirm that the CPH5 package dimensions and pinout match the PCB land pattern. Ensure thermal management accounts for the 500 mW total power dissipation limit under actual operating conditions rather than ideal test board specifications.

Selection Notes

Select this component when space constraints require combining a JFET input stage with a BJT output stage. The shared emitter/drain connection simplifies circuit topology compared to discrete solutions. Consider the H variant if a higher IDSS range of 16.0 to 32.0 mA is necessary for the application requirements.

Part Context

This part belongs to the CPH5905 family manufactured by onsemi. It utilizes the CPH5 package, which corresponds to SC-74A or SOT-25 form factors. The device replaces older discrete combinations, offering a compact solution for mixed-signal or high-frequency analog applications requiring both field-effect and bipolar transistor characteristics.

Replacement Considerations

CPH5905H-TL-E

FAQ

What is the difference between the CPH5905G-TL-E and CPH5905H-TL-E?

The primary difference is the Drain Current (IDSS) classification. The G suffix indicates an IDSS range of 10.0 to 20.0 mA, while the H suffix indicates a range of 16.0 to 32.0 mA.

How are the terminals connected in the CPH5905?

Pin 1 is Collector, Pin 2 is Gate, Pin 3 is Source, Pin 4 is Emitter/Drain (shared), and Pin 5 is Base.

CPH5905G-TL-ECPH5905G-TL-E
$0.17
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