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The EMC3DXV5T1G is a dual Bias Resistor Transistor (BRT) containing one PNP and one NPN silicon transistor with monolithic bias resistor networks in an SOT-553 package. It features a collector-emitter breakdown voltage of 50 Vdc and a maximum collector current of 100 mAdc. The integrated resistors are 10 kΩ for both the series base and base-emitter positions on each transistor. Thermal dissipation reaches 500 mW when both junctions are heated, with a junction temperature range from -55°C to +150°C.
Verify the specific device marking code 'U3' against the official datasheet to confirm the component identity. Ensure the ordering suffix matches the required packaging configuration. Confirm compliance with RoHS directives and check for any discontinuation notices or alternative sourcing recommendations from the manufacturer before finalizing procurement plans.
Select this component when circuit design requires a matched pair of PNP and NPN switching elements with fixed biasing. The 10 kΩ internal resistor values simplify drive circuit calculations. Consider the SOT-553 footprint constraints and thermal dissipation limits relative to the ambient operating environment during selection.
This part belongs to the EMCxDXV5T1G family of dual common base-collector bias resistor transistors manufactured by onsemi. The series includes variants with different resistor values, such as the EMC2DXV5T1G and EMC4DXV5T1G, all housed in the same SOT-553 surface mount package for consistent board layout strategies.
Direct substitutes within the same family include the EMC2DXV5T1G, EMC4DXV5T1G, and EMC5DXV5T1G. Verify that the internal resistor values of the replacement part match the original circuit requirements before implementation.