CPH6001-TL-E

Description：RF TRANS NPN 12V 6.7GHZ PCP
Series：-

SKU:601a98834eef Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 6.7GHZ PCP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Transistor Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector (Ic) (Max)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
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CPH6001-TL-E

Overview

The onsemi CPH6001A-TL-E is an NPN silicon RF bipolar transistor designed for high-frequency applications. It features a maximum collector-to-emitter voltage (VCEO) of 12 V and a continuous collector current (IC) of 100 mA. The device achieves a typical gain-bandwidth product (fT) of 6.7 GHz at IC=30mA, VCE=5V. DC current gain (hFE) ranges from 90 to 180 at IC=30mA, VCE=5V. Maximum power dissipation is 800 mW when mounted on a ceramic substrate. The component operates within a junction temperature range up to 150 °C and is supplied in a slim 6-pin CPH package.

Feature Summary

High gain performance with typical forward transfer gain of 11 dB at 1 GHz
High cut-off frequency capability reaching 6.7 GHz
Compact and slim 6-pin surface mount package design

Applications

RF amplifier circuits requiring high gain and bandwidth
Wireless communication systems operating in the UHF and microwave bands
Low noise front-end modules utilizing its low noise figure characteristics

Procurement Notes

Verify the exact part number suffix against official documentation to confirm packaging and material specifications. Ensure that the ordering information matches the required shipping memo and packing type. Confirm RoHS compliance status through the manufacturer's declaration before procurement. Validate that the supplier provides genuine components directly from authorized channels.

Selection Notes

Select this component for designs requiring high-frequency operation up to 6.7 GHz with moderate power handling. Consider the 800 mW power dissipation limit and thermal management requirements when mounting on substrates. Evaluate the S-parameter data for impedance matching networks at specific bias points. Ensure the application voltage does not exceed the 12 V collector-to-emitter rating.

Part Context

This component belongs to the CPH6001 series of RF transistors manufactured by onsemi. It utilizes silicon technology and is housed in the CPH6 package, which corresponds to JEITA/JEDEC standards such as SC-74 or SOT-26. The series is engineered for compact RF applications where small form factors and high performance are critical.