CPH6001A-TL-E

Overview

The onsemi CPH6001A-TL-E is an NPN silicon RF bipolar junction transistor designed for high-frequency applications. It features a transition frequency of 6.7 GHz and supports a maximum collector current of 100 mA with a collector-emitter breakdown voltage of 12 V. The device delivers a DC current gain (hFE) of at least 90 at 30 mA and 5 V, alongside a typical noise figure of 1.1 dB at 1 GHz. It operates within a temperature range up to +150°C TJ and is housed in a compact 6-CPH (SOT-23-6) surface-mount package.

Feature Summary

• Optimized for low-noise performance in radio frequency signal chains
• High-speed operation suitable for microwave frequency bands
• Compact surface-mount footprint for space-constrained designs

Applications

• Low-noise amplifier stages in wireless communication systems
• RF front-end modules requiring high gain and stability
• Signal processing circuits in mobile devices and base stations

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before finalizing purchase orders. Confirm RoHS compliance status and material declarations directly with the supplier to ensure adherence to environmental regulations applicable in your region. Cross-reference the distributor part number with the original manufacturer code to prevent substitution errors during assembly.

Selection Notes

Select this component when designing circuits that require a balance of high transition frequency and moderate power handling in a small outline package. Ensure the operating voltage remains below the 12 V collector-emitter limit and that thermal management accounts for the 800 mW maximum power dissipation. Verify that the required noise figure meets system specifications at the target operating frequency.

Part Context

This device belongs to onsemi's portfolio of silicon RF transistors, which are engineered for high-frequency analog and RF switching applications. The product line emphasizes low distortion and high gain consistency across various packaging options. These components support the development of efficient wireless infrastructure and consumer electronics by providing reliable performance in demanding electromagnetic environments.

Replacement Considerations

The Infineon BFR360FH6327XTSA1 is documented as a similar replacement option. Evaluate pin compatibility, electrical parameter margins, and package dimensions before substituting to ensure circuit integrity without redesign.