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The onsemi CPH6074-TL-E is a dual PNP bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector current of 50 mA and a collector-emitter breakdown voltage of 15 V. The device operates with a maximum power dissipation of 500 mW and supports a junction temperature up to 150°C. Packaged in a compact 6-CPH footprint, it offers a height of approximately 0.9 mm and a length of 2.9 mm, suitable for high-frequency RF circuits requiring efficient signal switching.
Verify the specific datasheet version and electrical characteristics directly from onsemi official documentation before integration. Confirm that the 6-CPH package dimensions align with PCB layout constraints. Ensure supply chain sources provide genuine components with traceable manufacturing records to maintain circuit reliability and performance standards.
Select this component when a dual PNP BJT structure is required for RF applications. Consider the 15 V breakdown voltage and 50 mA current limits against circuit requirements. Evaluate the 6-CPH package size for space-constrained designs. Compare thermal performance and switching speeds against alternative discrete transistors to ensure compatibility with system specifications.
This part belongs to the onsemi discrete semiconductor portfolio, specifically within the RF BJT category. It complements other small-signal transistors by providing a dual-channel solution in a compact form factor. The product line focuses on delivering reliable performance for high-frequency electronic systems and communication infrastructure.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 6-CPH package, dual PNP configuration, and 15 V/50 mA ratings. Verify pinout compatibility and thermal characteristics to maintain circuit integrity without redesign.