CPH6337-TL-W

Overview

The CPH6337-TL-W is a single P-Channel Power MOSFET manufactured by onsemi using trench technology. It features a Drain-to-Source Voltage (V_DSS) of -12 V and a continuous Drain Current (I_D) of -3.5 A. The device offers low on-resistance, specified as 70 mΩ at V_GS = -4.5 V, 115 mΩ at -2.5 V, and 215 mΩ at -1.8 V. Total gate charge (Qg) is 5.6 nC at V_GS = -4.5 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation of 1.6 W. The component is housed in a 6-pin MCPH package.

Feature Summary

• Utilizes trench technology to minimize gate charge and achieve low on-resistance.
• Capable of operation with low gate charge driving or specific low on-resistance requirements.
• Complies with Pb-Free, RoHS, and Halogen Free standards.

Applications

• Load Switch

Procurement Notes

Verify the exact ordering suffix for compliance requirements. The TL-W designation indicates Halogen Free compliance, whereas other suffixes may differ. Confirm current manufacturing status as this product line has been subject to discontinuation notices. Ensure compatibility with the required voltage and current ratings for the target circuit design before procurement.

Selection Notes

Select this component for applications requiring a single P-Channel MOSFET with a -12 V rating. Consider the specific R_DS(on) values at different gate voltages (-1.8 V, -2.5 V, -4.5 V) when designing the drive circuit. The low gate charge of 5.6 nC supports high-speed switching needs. Verify thermal management capabilities given the 1.6 W power dissipation limit in the MCPH package.

Part Context

This part belongs to the CPH6337 series from onsemi. It is a discrete semiconductor device categorized under Power MOSFETs. The device is designed for surface mount installation. It serves as a standalone switching element rather than an integrated driver or logic gate.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.