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Product Detailed Parameters
- Description：MOSFET P-CH 30V 5A 6CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：59mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：430 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-CPH
- Package / Case：SOT-23-6
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Overview
The CPH6341-TL-W is a single-channel P-Channel Power MOSFET from the 4V Drive Series by onsemi. It utilizes silicon technology and is housed in an SOT-26-6 (SOT-363) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 30 V, a continuous drain current of 5 A, and a maximum power dissipation of 1.6 W. The device features a typical on-resistance of 115 mOhms at VGS = -4.5 V. Gate-source voltage limits are ±20 V, with a threshold voltage of 2.6 V and total gate charge of 10 nC. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Optimized for low-voltage drive applications requiring efficient switching performance.
- Designed for high-speed switching with defined rise and fall times.
- Enhancement mode operation suitable for general-purpose switching tasks.
Applications
- General-purpose switching devices
- Low-voltage load switching circuits
- Power management modules
Procurement Notes
Verify the specific suffix 'TL-W' against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and compliance status. Ensure the component matches the required SOT-26-6 footprint and pinout configuration for your PCB layout. Cross-reference the part number with official onsemi documentation to validate availability and lifecycle status before finalizing procurement plans.
Selection Notes
Select this component when a P-Channel MOSFET with a 30 V rating and 5 A current capacity is required. The 115 mOhm on-resistance offers a balance between conduction loss and cost for 4V logic-level drive interfaces. Consider the thermal constraints imposed by the 1.6 W power dissipation limit in the small SOT-26-6 package during high-duty-cycle operations.
Part Context
This part belongs to onsemi's 4V Drive Series, designed for applications where gate drivers operate at lower voltage levels. The CPH6341 variant specifically provides higher current handling compared to some series counterparts, making it suitable for moderate power switching needs within compact form factors common in portable and industrial electronics.
Replacement Considerations
Direct substitutes may include other P-Channel MOSFETs in SOT-26-6 packages with similar 30 V/5 A ratings, such as the MCH6341-TL-H or CPH6354-TL-W, provided their on-resistance and drive characteristics align with the design requirements.
