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Product Detailed Parameters
- Description：MOSFET P-CH 20V 6A 6CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：39mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-CPH
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The CPH6347-TL-W is a single-channel P-Channel enhancement mode MOSFET from onsemi, designed for low-voltage drive applications. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 6 A. The device exhibits a maximum on-resistance of 30 mOhms with a gate charge of 10.5 nC. It operates within a temperature range of -55 °C to +150 °C and dissipates up to 1.6 W of power. Packaged in an SOT-26-6 surface-mount configuration, it utilizes silicon technology.
Feature Summary
- Optimized for 1.8 V drive series applications
- Low on-resistance for efficient power switching
- High thermal stability with extended operating temperature range
Applications
- Low-side load switching
- Power management circuits
- Battery protection systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS and REACH compliance status prior to integration. Check for obsolescence notices as the lifecycle status indicates potential discontinuation. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity damage during assembly.
Selection Notes
Select this component for designs requiring reliable P-Channel switching at low gate drive voltages. The 20 V rating suits 3.3 V and 5 V logic interfaces. Consider the 30 mOhm resistance for thermal management in high-current paths. Evaluate the SOT-26-6 package constraints against PCB layout requirements. Compare performance metrics against alternative devices if higher voltage ratings are needed.
Part Context
This part belongs to the CPH6347 series of P-Channel MOSFETs. It shares the SOT-26-6 package form factor with other variants in the lineup. The series targets portable electronics and industrial control applications where space efficiency and drive compatibility are critical. It complements N-Channel counterparts in complementary bridge configurations.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters carefully. Ensure any substitute maintains the 1.8 V drive capability and similar on-resistance characteristics.
