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The onsemi CPH6355-TL-H is a single P-Channel Power MOSFET designed for general-purpose switching applications. It features a -30V drain-source breakdown voltage and supports a continuous drain current of -3A at ambient temperature. The device exhibits a maximum on-resistance of 169mΩ, ensuring efficient power handling with a power dissipation rating of 1.6W. Operating within a temperature range of -55°C to +150°C, it utilizes an SOT-26-6 surface-mount package. Key electrical characteristics include a gate-source voltage limit of 20V, a threshold voltage of 2.6V, and a gate charge of 3.9nC.
Verify the specific suffix (TL-H) against official datasheets to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure the component meets all thermal management requirements given the 1.6W dissipation rating. Cross-reference pinouts with the SOT-26-6 standard to prevent layout errors during PCB design.
Select this component for designs requiring a single P-Channel switch with moderate current capabilities. The 169mΩ on-resistance balances conduction losses with cost efficiency. Verify that the 20V gate-source voltage rating aligns with the control logic levels. Consider the SOT-26-6 footprint constraints when determining board space allocation for the final assembly.
This part belongs to the CPH6355 series from onsemi, which focuses on intelligent power solutions. The series targets industrial and consumer electronics markets where reliable switching performance is required. It complements other discrete transistors in the portfolio by offering a standardized form factor for easy integration into existing power management architectures.
Check for direct substitutes within the CPH6355 family, such as the CPH6355-TL-W variant. Verify pin compatibility and electrical parameter equivalence before substitution. Consult official replacement guides to ensure no functional degradation occurs in the target application.