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Product Detailed Parameters
- Description：MOSFET N-CH 60V 2A 6CPH
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：220mOhm @ 1A, 4V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：4.2 nC @ 4 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：325 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-CPH
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The CPH6429-TL-E is an N-channel MOSFET manufactured by onsemi, designed for efficient switching and control applications. It features a maximum drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 2 A. The device is housed in a compact 6-CPH surface-mount package, which facilitates automated assembly and space-constrained designs. This component belongs to the discrete semiconductor product category, specifically within single FETs and MOSFETs.
Feature Summary
- N-channel configuration optimized for low-side switching operations
- Compact 6-CPH surface-mount package for high-density PCB layouts
- Designed for efficient power control with robust reliability
Applications
- General purpose switching circuits
- Power management modules
- Consumer electronics load control
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly from onsemi official documentation before integration. Confirm that the 6-CPH package dimensions match your PCB footprint requirements. Ensure thermal management strategies align with the device's power dissipation limits under your specific operating conditions. Cross-reference part numbers to avoid counterfeit components.
Selection Notes
Select this component when a 60 V rating and 2 A current capacity are sufficient for the application. The 6-CPH package offers a smaller footprint compared to standard SOT-23 variants, making it suitable for dense layouts. Evaluate gate charge characteristics if high-frequency switching is required. Compare against other N-channel MOSFETs in the same voltage class for optimal Rds(on) performance.
Part Context
This part falls under onsemi’s discrete semiconductor portfolio, specifically the MOSFET segment. It complements their broader range of intelligent power and sensing technologies. The component supports industrial and consumer applications requiring reliable switching solutions. It is part of the company’s strategy to provide scalable performance for mission-critical power systems.
Replacement Considerations
Consult onsemi official substitution guides for verified alternatives. Generic equivalents may differ in package pinout or electrical parameters. Verify compatibility with existing gate drive circuits before replacement.
