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The onsemi CPH6442-TL-W is a single N-channel enhancement mode MOSFET designed for surface-mount applications. It features a 60 V drain-source breakdown voltage and supports a continuous drain current of 6 A. The device utilizes a low-profile SOT-26-6 package with dimensions of 2.9 mm length, 1.6 mm width, and 0.9 mm height. Key electrical characteristics include a maximum on-resistance of 33 mΩ at standard gate drive conditions and a typical gate charge of 20 nC. It operates within a temperature range of -55 °C to +150 °C junction temperature.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets or manufacturer documentation before integration. Ensure storage and handling procedures adhere to moisture sensitivity levels specified in the manufacturing data sheet to prevent package damage during soldering processes.
Select this component when a compact N-channel solution with 60 V rating and 6 A current capacity is required. The SOT-26-6 package suits space-constrained designs. Verify that the application's gate drive voltage aligns with the threshold requirements for optimal Rds(on) performance. Consider thermal dissipation capabilities relative to the 1.6 W power rating in the final PCB layout.
This part belongs to the CPH series of MOSFETs from onsemi, focusing on efficient power switching in small form factors. The CPH6442 variant specifically targets applications requiring moderate voltage blocking and high current handling in a minimal footprint. It represents a standard discrete power transistor option within the manufacturer's broader portfolio of silicon-based switching devices.
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 60 V/6 A specifications and SOT-26-6 package dimensions. Verify pinout compatibility and electrical parameters such as Rds(on) and Qg to maintain circuit performance integrity.