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The CPH6443-P-TL-H is an N-channel silicon MOSFET manufactured by onsemi using trench technology. It features a maximum drain-source voltage of 20 V and a continuous drain current of 6 A at case temperature. The device offers a low on-resistance of 156 mΩ and a gate charge of 2.8 nC at 4.5 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation of 1 W. The component is housed in a surface-mount 6-CPH package, also identified as TSOT-23-6 or SOT-23-6 Thin.
This component is obsolete and no longer manufactured by onsemi. Procurement must focus on verified substitute part numbers from authorized distributors or secondary market suppliers. Verify authenticity and storage history due to end-of-life status. Ensure the replacement matches the original electrical specifications and pinout compatibility before integration into designs.
Select this component for low-voltage switching tasks requiring high current density in compact packages. The 6-CPH footprint suits space-constrained PCB layouts. Consider thermal performance given the 1 W dissipation limit. Evaluate gate drive requirements against the 2.8 nC charge specification for efficient switching speeds in portable electronics.
Part of onsemi's CPH series of single FETs, designed for cost-effective surface-mount solutions. The CPH package provides a small outline transistor form factor optimized for automated assembly. This specific model represents a legacy product line transitioning out of active production, reflecting industry shifts toward newer packaging technologies.
Verify direct substitutes such as CPH6443-TL-H or equivalent N-channel MOSFETs with matching 20V/6A ratings. Confirm package compatibility (6-CPH/TSOT-23-6) and electrical parameters like Rds(on) and Vgs(th). Cross-reference datasheets to ensure functional equivalence in switching speed and thermal characteristics.