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The CPH6531-TL-E is a PNP dual bipolar junction transistor manufactured by onsemi in the ultrasmall CPH6 surface-mount package. It features two equivalent PNP chips within a single component, designed for high-density mounting. The device supports a maximum collector current of -1.0 A and withstands collector-to-emitter voltages up to -50 V. Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 560 at -100 mA, a gain-bandwidth product of 420 MHz, and low saturation voltages of -380 mV max for Transistor 1 and -200 mV max for Transistor 2. Total power dissipation reaches 1.1 W on a ceramic substrate.
Verify the specific ordering suffix TL-E against official documentation to confirm packaging details and compliance status. Ensure that the CPH6 package footprint matches the target PCB land pattern design. Confirm thermal management requirements align with the specified total power dissipation limits under actual operating conditions.
Select this component when space constraints require dual PNP transistors in an ultrasmall form factor. The CPH6531 serves as a direct functional replacement for two individual CPH3116 units. Evaluate the -50 V voltage rating and -1.0 A current capability against circuit demands to ensure adequate headroom for relay or motor driver loads.
The CPH6531 belongs to onsemi's CPH series of composite bipolar transistors. These devices integrate multiple transistor chips into compact packages to reduce board area. The CPH6 package variant provides a specific pinout and physical dimension optimized for high-volume surface mount assembly processes in consumer and industrial electronics.
The datasheet explicitly states that the two chips contained are equivalent to the CPH3116. Designers requiring a single-transistor solution may consider the CPH3116, though it occupies more board space than the dual-configuration CPH6531.