SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CPMF-1200-S080B is a silicon carbide (SiC) N-channel MOSFET bare die from Wolfspeed. It features a 1200V blocking voltage and an on-resistance of 80mΩ. The device supports a continuous drain current of 50A at a junction temperature of 175°C. This component utilizes advanced SiC technology to deliver high efficiency and thermal performance in power conversion applications.
Verify the specific suffix 'S080B' against official Wolfspeed documentation to confirm the exact on-resistance value and electrical specifications. Ensure compatibility with your intended module assembly process, as this is a bare die component requiring custom packaging or integration into larger power modules rather than a standalone packaged device.
Select this component when designing high-efficiency power systems requiring 1200V blocking capability with moderate current handling around 50A. Consider its bare die format if you are developing custom power modules or utilizing Wolfspeed's WolfPACK® technology. Evaluate thermal management requirements carefully, as heat dissipation depends on the final mounting substrate and cooling solution implemented by the system designer.
This part belongs to Wolfspeed's family of 1200V Silicon Carbide MOSFETs. These devices are optimized for high-power applications where efficiency and power density are critical. The product line leverages Wolfspeed's vertical integration, providing control over the entire manufacturing process from substrate to finished device to ensure reliability and performance consistency across various industrial and energy applications.
Consult official Wolfspeed substitution guides for compatible alternatives within the same voltage class. Verify that any substitute maintains equivalent on-resistance, gate charge parameters, and thermal characteristics to ensure seamless integration without redesigning the gate drive or thermal interface.
No, this component is a bare die. It is intended for integration into custom power modules or assemblies rather than direct PCB mounting in a standard package.
The device is rated for operation up to a junction temperature of 175°C, consistent with standard silicon carbide MOSFET specifications.