CPMF-1200-S080B

CPMF-1200-S080B

  • Description:SICFET N-CH 1200V 50A DIE
  • Series:Z-FET™
  • Mfr:Wolfspeed, Inc.
  • Package:Bulk

SKU:7ff580fc7ad6 Category: Brand:

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Product Detailed Parameters

  • Description:SICFET N-CH 1200V 50A DIE
  • Series:Z-FET™
  • Mfr:Wolfspeed, Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:50A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:90.8 nC @ 20 V
  • Vgs (Max):+25V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds:1915 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):313mW (Tj)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:Die
  • Package / Case:Die

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CPMF-1200-S080B

Overview

The CPMF-1200-S080B is a silicon carbide (SiC) N-channel MOSFET bare die from Wolfspeed. It features a 1200V blocking voltage and an on-resistance of 80mΩ. The device supports a continuous drain current of 50A at a junction temperature of 175°C. This component utilizes advanced SiC technology to deliver high efficiency and thermal performance in power conversion applications.

Feature Summary

  • Utilizes silicon carbide semiconductor material for superior thermal conductivity and high-temperature operation capabilities.
  • Engineered with low on-resistance characteristics to minimize conduction losses during operation.
  • Designed as a bare die component, allowing flexible integration into custom module architectures and assembly processes.

Applications

  • High-voltage DC/DC converters
  • Switched-mode power supplies
  • Uninterruptible Power Supplies (UPS)
  • Solar and energy storage systems

Procurement Notes

Verify the specific suffix 'S080B' against official Wolfspeed documentation to confirm the exact on-resistance value and electrical specifications. Ensure compatibility with your intended module assembly process, as this is a bare die component requiring custom packaging or integration into larger power modules rather than a standalone packaged device.

Selection Notes

Select this component when designing high-efficiency power systems requiring 1200V blocking capability with moderate current handling around 50A. Consider its bare die format if you are developing custom power modules or utilizing Wolfspeed's WolfPACK® technology. Evaluate thermal management requirements carefully, as heat dissipation depends on the final mounting substrate and cooling solution implemented by the system designer.

Part Context

This part belongs to Wolfspeed's family of 1200V Silicon Carbide MOSFETs. These devices are optimized for high-power applications where efficiency and power density are critical. The product line leverages Wolfspeed's vertical integration, providing control over the entire manufacturing process from substrate to finished device to ensure reliability and performance consistency across various industrial and energy applications.

Replacement Considerations

Consult official Wolfspeed substitution guides for compatible alternatives within the same voltage class. Verify that any substitute maintains equivalent on-resistance, gate charge parameters, and thermal characteristics to ensure seamless integration without redesigning the gate drive or thermal interface.

FAQ

Is the CPMF-1200-S080B available in a standard package?

No, this component is a bare die. It is intended for integration into custom power modules or assemblies rather than direct PCB mounting in a standard package.

What is the maximum operating junction temperature for this device?

The device is rated for operation up to a junction temperature of 175°C, consistent with standard silicon carbide MOSFET specifications.

CPMF-1200-S080BCPMF-1200-S080B

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